Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
نویسندگان
چکیده
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by molecular beam epitaxy are reported. Growth details are described,the comparison enters the properties electric of InN/Si and AlGaN/Si photodectors with 0.2 μm of AlGaN and InN layers. Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band diagram, doping profile, conduction current density,I-V caracteristic , internal potential and electric field were performed.
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